Porous silicon as an intermediate buffer layer for GaN growth on (100) Si

Matoussi, Adel; Boufaden, T.; Missaoui, A.; Guermazi, S.; Bessaı̈s, B.; Mlik, Y.; Jani, B. El

doi:10.1016/s0026-2692(01)00061-1

Cited by 37 publications

(24 citation statements)

References 13 publications

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“…The formation of porous structures during electrochemical etching of semiconductors under anodic bias has been the focus of considerable research efforts, due to the fundamental insight such studies reveal about semiconductor etching characteristics, and the potential applications of porous semiconductor structures (1)(2)(3)(4)(5)(6)(7). Although the bulk of this work has focused primarily on porous Si, a lot of attention has also been given to III-V compounds such as GaAs (8,9) and InP (10)(11)(12).…”

Section: Introductionmentioning

confidence: 99%

Deconvolution of the Potential and Time Dependence of Electrochemical Porous Semiconductor Formation

et al. 2009

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Section: Introductionmentioning

confidence: 99%

Deconvolution of the Potential and Time Dependence of Electrochemical Porous Semiconductor Formation

et al. 2009

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“…Analysis of X-ray diffraction spectra shows that all the films grown in the range 500-600 °C are preferentially the (0002) hexagonal phase [6,7]. The cubic phase is found to appear as the temperature is increased above 600 °C.…”

Section: 25mentioning

confidence: 95%

“…The details of the MOVPE growth are reported elsewhere [6]. In the growth step, the flow rates of trimethylgallium (TMG), ammonia (NH 3 ) and hydrogen (H 2 ) are kept as 0.36 l/min, 0.06 l/min, and 0.12 l/min, respectively.…”

Section: Methodsmentioning

confidence: 99%

Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN

Matoussi¹,

Boufaden

Guermazi³

et al. 2003

Physica Status Solidi (b)

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In this paper we report electron beam induced current (EBIC) measurements on Schottky diodes on undoped GaN samples grown by the metal organic vapor phase epitaxy method on porous silicon substrates. A 2D simulation model was applied to perform the theoretical EBIC profiles and to compare with the experimental one. A minority carrier diffusion length (L) for holes of 0.72 µm was measured in the space charge region, indicating constant diffusivity of 6.48 cm 2 /s and a lifetime coefficient of 0.8 ns. An increase of L is observed as the probe source is moved from the Schottky junction to the bulk material. This increase was related to the polarization effects that are preponderant in group III-nitride devices. Far from the depletion layer (greater than 0.91 µm) the measured current is produced by the reabsorbed recombination radiation process. This corresponds to an optical self-absorption coefficient of a p = 0.112 µm . The results show that the transport parameters depend on the growth technology.

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“…Introduction of intermediate layer with appropriate design before deposition of functional top layer is typically used to prevent crack formation during the deposition process. 14), 15) This method can reduce the thermal mismatch at the interface between the film and substrate. 16),17) It also can contribute to stabilization of films on substrate.…”

Section: Introductionmentioning

confidence: 99%

Plasma resistance of Y<sub>2</sub>O<sub>3</sub> nanofilms on quartz with different interlayer deposited by EB-PVD

Kim¹,

Lee

Kim

et al. 2012

J. Ceram. Soc. Japan

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The Y 2 O 3 films were deposited on quartz plates using an electron beam (EB) evaporation method with different interlayer. The two types of interlayer, which were compositionally graded and alternated stacks of Y 2 O 3 and SiO 2 layer, were applied with the intent to prevent flaking of the coating due to a thermal mismatch between the Y 2 O 3 film and quartz substrate. The field emission scanning electron microscopy (FESEM) analysis indicated that the Y 2 O 3 film with interlayer which consisting of alternated stacks of Y 2 O 3 and SiO 2 layer, shows more structural stability, no crack propagation or flaking of the top layer, than other film samples. The plasma resistance of the Y 2 O 3 films was analyzed by a plasma etching test using inductively coupled plasma (ICP) conditions with a gas mixture of CF 4 /O 2 . The etching resistance of the Y 2 O 3 films was evaluated by measurement of etching depth. The etching depths of Y 2 O 3 films with interlayer were shown as 20 times lower than quartz plate.

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Porous silicon as an intermediate buffer layer for GaN growth on (100) Si

Cited by 37 publications

References 13 publications

Deconvolution of the Potential and Time Dependence of Electrochemical Porous Semiconductor Formation

Deconvolution of the Potential and Time Dependence of Electrochemical Porous Semiconductor Formation

Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN

Plasma resistance of Y<sub>2</sub>O<sub>3</sub> nanofilms on quartz with different interlayer deposited by EB-PVD

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