Microstructure investigations of thin Si-Sn alloy films were carried out, by using Auger and Raman spectroscopies, X-ray fluorescence analysis, and electron microscopy. The films were produced by the thermal-vacuum coevaporation of Si and Sn. The properties of films with the Sn content ranging from 1 to 5 wt.% are studied. A significant influence of the tin impurity on the formation of a film surface microrelief and nanocrystals in the amorphous matrix is found. The size of quasispherical formations on the film surface can be of the order of 100 nm. The volume fraction of the silicon nanocrystalline phase in a film can reach 90%. The roles of fabrication conditions and growth rate on the distributions of Sn and technological impurities C and O over the film surface and across the film thickness are analyzed. K e y w o r d s: Microstructure of thin composite films, Auger method, Raman spectroscopy.
Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.
n-type Czochralski silicon was doped or co-doped in the melt with various group IV elements (Sn, C, Pb) and has been irradiated with 1 MeV electrons to a fluence of 1 × 10 16 cm −2 . The irradiation-induced electrically active defects have been studied by deep level transient spectroscopy (DLTS). It is shown that while Sn is an efficient vacancy trap, leading to the formation of SnV centres, no specific Pb-related deep levels have been found in the upper half of the bandgap. The dominant electron trap is the A centre, while similar concentrations of SnVs are formed in Sn-and Pb + Sn-doped n-Cz material. A number of as yet unidentified deep levels with smaller concentrations has also been observed, together with some grown-in peaks, whereof some could be hydrogen or carbon and lead related.
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