2014 L'intérêt est grand actuellement pour la réalisation de matrices plan focal sensibles à l'infrarouge thermique du type CCD, CID. Nous montrons dans cet article qu'il est possible de réaliser, malgré les difficultés inhérentes aux matériaux et aux techniques nouvelles, des matrices monolithiques sur InSb présentant des caractéristiques intéressantes et prometteuses. Des valeurs de détectivités de 3 x 1011 cm H1/2 W-1 pour une barrette linéaire de 32 éléments et de 5 1010 cm H1/2 W-1 pour une matrice de 8 x 8 éléments ont pu être mesurées qui sont très proches de celles obtenues sur les meilleurs détecteurs photovoltaiques. Les valeurs de rendement et de temps de transfert, obtenues par une modélisation et une analyse théorique, permettent d'établir la faisabilité de matrices comptant un millier d'éléments et lues par un seul préamplificateur. Abstract. 2014 It is of great importance to day to obtain thermal IR sensitive CCD or CID matrix arrays. This paper shows that it is possible, in spite of difficulties which appear with the new technics and material used, that monolithic InSb Arrays with good performances can be fabricated. Detectivities of about 3 x 1011 cm H1/2 W-1 for a 32 elements linear array and 5 x 1010 cm H1/2 W-1 for an 8 x 8 element matrix have been measured, which are very close to detectivities of best photovoltaic detectors. Efficiency and transfer time values are obtained via theoretical analysis and modelling which show the feasibility of a 1 000 elements matrix array read by a single preamplifier.
This paper presents SAT indium antimonide Charge Injection Devices (C.I.D) Technology, post focal plane signal processing and some applications.These detectors are constituted by MOS capacitors realized on InSb wafers using integrated circuit -like processing. When a negative voltage is applied to the structure (put it into depletion) the capacitors form integrating detectors for use in 3 -5 pm band. Linear arrays constituted by a line of single capacitors, matrix arrays constituted by a group of two coupled MOS capacitors, collect and store photon generated charge carriers. In the last case, the selection of a site is accomplished by X -Y decoding technique.SAT manufactures currently line arrays with as many as 64 elements and staring arrays with as many as 32 x 32 elements. Works about 128 elements line arrays and 64 x 64 elements matrix array is being develloped.After a brief description of CID mechanisms this paper presents detectors manufacturing and focal plane evaluation method.Staring infrared imagers possess an inherent fixed pattern noise which is determined by the non uniformities in quantum and transfert efficiencies, dark current, electrical coupling circuitry. These defaults rust be compensated.On the other hand, staring arrays are characterized by a low integration time : so, a frame averager oust be used to be compatible with equipments frame rate and increase signal to noise ratio.This post signal processing used in an experimental camera is to be described. These works are defined in a contract with Direction des Recherches Etudes et Techniques (n° 83.34.073). Other civil and military applications are presented. INTRODIICTION Since 1975, SAT has been investigating various IR focal plane technologies including in particular Charge Injection Device (CID), as part of an extensive study program supported by the French "Direction Générale pour l'Armement" (French Department of Defense). As a result of this research, both line and area arrays of infrared detectors fa-red on InSb wafers have been developed for applications in the 3 -5 pm waveband.The particularly good performances demonstrated by these components has enabled them to be incorporated to a variety of equipment destined for both civil and military applications. CID MECHANISMCID detectors are MIS capacitors (Metal -Insulator -Semiconductor). In detector applications, these capacitors are biased into depletion to, form effective potential wells collecting and storing the charge carriers generated by the incident photons. These charge carriers are usually holes, since the arrays use N -type indium antimonide.When a negative voltage is suddenly applied to the gate of the MIS capacitor, the electrons are driven out of the region just under the gate, leaving behind fixed positive charge carriers in the crystal lattice of the substrate. These ions form an extensive positive charge region (depletion region) whose width is dependent on dopant density as well as on the voltage applied to the gate. A negative charge appears on the metal side of the s...
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