Direct solid analysis of ultrathin layers is investigated using pulsed radiofrequency (rf) glow discharge (GD) time-of-flight mass spectrometry (TOFMS). In particular, previous studies have always integrated the detected ion signals in the afterglow region of the rf-GD pulse, which is known to be the most sensitive one. Nevertheless, the analytical capabilities of other pulse time regions have not been evaluated in detail. Therefore, in this work, we investigate the analyte prepeak region, which is the pulse region where the analyte ions peak after the initial sputtering process of each GD pulse, aiming at obtaining improved depth profile analysis with high depth resolution and with minimum polyatomic spectral interferences. To perform these studies, challenging ultrathin Si-Co bilayers deposited on a Si substrate were investigated. The thickness of the external Si layer was 30 nm for all the samples, whilst the internal Co layer thicknesses were 30, 10, 5, 2 and 1 nm, respectively. It should be remarked that the top layer and the substrate have the same matrix composition (Si > 99.99%). Therefore, the selected samples are suitable to evaluate the response of the Si ion signal in the presence of an ultrathin Co layer as well as the possible oxygen contaminations or its reactions. Additionally, these samples have been evaluated using time-of-flight secondary ion mass spectrometry, and the results compare well to those obtained by our pulsed rf-GD time-of-flight mass spectrometry results.

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Glow discharge mass spectrometry has been widely used for trace and ultra-trace element analysis of high-purity alloys. A novel pulsed radio frequency glow discharge time-of-flight mass spectrometer (rf GD TOFMS) has been developed that retains the pulsed radio frequency analytical ion source to provide ion signal enhancement due to processes involving Penning ionisation. A time-resolved detection mode has been implemented to sample the afterglow regime of the pulse profile, corresponding to the highest ion signal intensities. Here, the performance of rf GD TOFMS in isotope differentiation is discussed. Anodic tantala films, comprising 18 O-rich layers of controlled thicknesses and locations, were formed by appropriate combination of anodising of tantalum in electrolytes enriched with 18 O isotopes and of natural O isotopic abundance. Transmission electron microscopy (TEM) and radio frequency glow discharge optical emission spectrometry (rf GD OES) analyses were performed to examine the morphology and elemental distributions of the specimens, while the content of 18

Molecular weight distribution has been measured in monodisperse polystyrene film (MW=9 000 amu) after ion bombardment, in the ion fluence range 1011–1013 ions/cm2. The chosen beams are 100 keV He, 200 keV Ne, and 400 keV Ar. The experimental data have been interpreted in terms of a simple statistical model for cross-links. The chemical yield is found to be very high and equal to 0.30, about a factor of 10 higher than the values given in the literature for gamma irradiation [M. Dole, in The Radiation Chemistry of Macromolecules (Academic, New York, 1973), Vol. 2, Chap. 5, p. 57].