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We experimentally demonstrate a giant voltage-controlled magnetic anisotropy (VCMA) coefficient in a crystallographically strained CoFe layer (>15 monolayers in thickness) in a MgO/CoFe/Ir system. We observed a strong applied voltage dependence of saturation field and an asymmetric concave behavior with giant VCMA coefficients of %758 and 1043 fJ V %1 m %1 . The result of structural analysis reveals epitaxial growth in MgO/ CoFe/Ir layers and the orientation relationship MgO(001) [110] k CoFe(001)[100] k Ir(001) [110]. The CoFe layer has a bcc structure and a tetragonal distortion due to the lattice mismatch; therefore, the CoFe layer has a large perpendicular magnetic anisotropy.