The localization energies, capture cross sections, and storage times of holes in GaSb quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD sizes. The structural properties, such as height and diameter, are determined by atomic force microscopy, while the electronic properties are measured using deep-level transient spectroscopy. The various QDs exhibit varying hole localization energies corresponding to their size. The maximum localization energy of 800 (650) meV is achieved by using additional Al 0.3 Ga 0.7 As barriers. Based on an extrapolation, alternative material systems are proposed to further increase the localization energy and carrier storage time of QDs. V
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