The influences of annealing temperature (473–573 K) on the crystal structure, linear/nonlinear optical parameters, and electrical characteristics of 80 nm thick indium-doped tin oxide (ITO) thin films are investigated. Thermal annealing induces the crystal structure in the ITO. As-prepared and annealed ITO have various morphologies depending on the annealing temperature, such as nanoplates and dendritic and spherical nanoparticles. As the substrate temperature increased up to 370 K, the electrical resistivity and sheet resistance of as-prepared ITO decreased dramatically and then slightly decreased as the substrate temperature further increased. The electrical conductivity and activation energy for the various processes were estimated. The reflectance (R) and transmittance (T) data are used to calculate the linear/nonlinear optical constants and parameters. The optical bandgap increased from 3.18 to 3.8 eV as the annealing temperature increased from room temperature to 573 K. Crystallinity is improved due to the annealing and hence an enhancement in the optical energy bandgap is achieved. Meanwhile, high-temperature annealing reversibly affected the optical bandgap energy of ITO thin films via reduction and oxidation reactions. Thermal annealing of ITO films improves crystal structure, visual transparency, and electrical conductivity, making it the preferred material for optoelectronic devices and solar cells.
Chalcogenide glasses of GexSe100-x (x=10, 15, 20, 25 and 30 at.%) glasses were prepared by vacuum melting. An empirical relation between the glass transition temperature (Tg) and <r> is proposed by applying the Gibbs-Di Marzio equation for the Tg of a crosslinked polymer as a function of cross-linked density. We found a good agreement with the experimental result of Tg for GexSe100-x glasses. Several parameters such as mean atomic volume density, compactness, and free volume percentage which are more sensitive to the structure network changes were calculated. Their variation is discussed in connection with the proposed structural model. The variation of the molar volume and Tg with <r> indicates the coexistence of topological and chemical ordering effects. With the structural modification, the number of lone-pair decreases, and the covalent coupling of the structural network increases with increasing Ge content, due to the increases in the crosslinked between Ge and Se bridge.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.