2022
DOI: 10.1007/s10854-022-09051-6
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Influence of annealing temperature on structural, electrical, and optical properties of 80 nm thick indium-doped tin oxide on borofloat glass

Abstract: The influences of annealing temperature (473–573 K) on the crystal structure, linear/nonlinear optical parameters, and electrical characteristics of 80 nm thick indium-doped tin oxide (ITO) thin films are investigated. Thermal annealing induces the crystal structure in the ITO. As-prepared and annealed ITO have various morphologies depending on the annealing temperature, such as nanoplates and dendritic and spherical nanoparticles. As the substrate temperature increased up to 370 K, the electrical resistivity … Show more

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Cited by 9 publications
(3 citation statements)
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“…Thermal management transparent coatings have been developed with indium tin oxide (ITO). , Despite such works, ITO is not the ideal material for wearable technology upscaling, as elevated temperatures or magnetron sputtering methods are necessary for high-quality films, which is expensive and time-consuming. A scalable fabrication approach that does not form bilayers of AgNW networks for smaller nanowire spacing will be required to further improve the transparent radiation shield.…”
Section: Discussionmentioning
confidence: 99%
“…Thermal management transparent coatings have been developed with indium tin oxide (ITO). , Despite such works, ITO is not the ideal material for wearable technology upscaling, as elevated temperatures or magnetron sputtering methods are necessary for high-quality films, which is expensive and time-consuming. A scalable fabrication approach that does not form bilayers of AgNW networks for smaller nanowire spacing will be required to further improve the transparent radiation shield.…”
Section: Discussionmentioning
confidence: 99%
“…Nevertheless, these values are good agreement with typical value reported previously. For example, Abd-Elnaiem et al [67], extracted Eg for as-deposited and for annealed ITO thin film with thickness of 80 nm at 300°C to be ~ 3.2 eV and~ 3.8 eV, respectively. Meanwhile, Eg for a 200 nm-thick ITO films heattreated with RTA at 600°C was determined to be as high as 4.04 eV by Song et al [25].…”
Section: Annealing Effects On Uv-vis-nir Optical Properties Of Ito Filmsmentioning
confidence: 99%
“…Furthermore, Han and co-workers reported an HTM-free TPSC by doping ammonium cation salt (EDAI 2 ) as the nuclear sites for appropriate band alignment to attain a PCE of 10.1% with good thermal and light-soaking stability . Subsequently, more emphasis was given to interfacial modification via simple dip-coating of self-assembled hole-selective monolayers to functionalize the ITO substrates. , The functionalization was accomplished by tuning the surface properties of the underlying transparent electrodes via facile thermal annealing that improved the interfacial properties …”
Section: Introductionmentioning
confidence: 99%