This historical review covers IBM experiments in evaluating radiation-induced soft fails in LSI electronics over a fifteen-year period, concentrating on major scientific and technical advances which have not been previously published.

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Accelerator (proton and neutron) measurements of 44 memory device vintages. along with 13 years of avionics processor experience, indicate that Dynamic Random Access Memories (DRAMS), rather than Static Random Access Memories (SRAMs), may become the future memory of choice for protection against atmospheric neutron single event upset.

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