Standards made up from calibrated solutions deposited on filter paper and dried were measured along with the specimens and blanks. Analytical results were compared with those obtained by atomic absorption spectrophotometry. Air particulate pollution data from a statewide survey in Texas were compared with other available data. The method and equipment has proved itself capable of use for air particulate survey measurements and for pollution source location.
In this paper, the impact of gate induced drain leakage (GIDL) on the overall leakage of submicrometer VLSI circuits is studied. GIDL constitutes a serious constraint, with regards to off-state current, in scaled down complimentary metal-oxide-semiconductor (CMOS) devices for DRAM and/or EEPROM applications. Our research shows that the GIDL current is also a serious problem in scaled CMOS digital VLSI circuits. We present the experimental and simulation data of GIDL current as a function of 0.35-m CMOS technology parameters and layout of CMOS standard cells. The obtained results show that a poorly designed standard cell library for VLSI application may result in extremely high leakage current and poor yield.
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