We have obtained fast loading of a rubidium magneto-optical trap and very high collection efficiency by\ud capturing the atoms desorbed by a light flash from a polydimethylsiloxane film deposited on the internal\ud surface of a cell. The atoms are trapped with an effective loading time of about 65 ms at a loading rate greater\ud than 23108 atoms per second. This rate is larger than the values reported in literature and is obtained by\ud preserving a long lifetime of the trapped atoms. This lifetime exceeds the filling time by nearly two orders of\ud magnitude. Trap loading by light-induced desorption from siloxane compounds can be very effectively applied\ud to store and trap a large number of atoms in the case of very weak atomic flux or extremely low vapor density.\ud It can be also effectively used for fast production of ultracold atoms
Globally optimal solution describing a phase conjugated field of Raman scattering on the resonant B r X transition of iodine I 2 is studied. Maximum optical coherence is found as a top eigenvalue problem. A reversibility theorem has been stated. This provides sufficient conditions for a tightly localized waveform and molecular hologram to exist. A noisy picosecond pulse has been computed to show how femtosecond polarization is regained at target time.
We consider interaction of an electron with a Bose condensate of atoms having electron affinity. Though states of the electron attached to atoms form a continuous band, tunneling through this band is strongly suppressed by quantum fluctuations of the condensate density. We adapt standard field theory methods originally developed for description of a particle propagating trough a disordered potential and present an exactly soluble analytical model of the process. In contrast with the standard description, we take into account inelastic processes associated with quantum transitions in the condensate. Possibilities of the experimental observation of the phenomenon are discussed.
We examine the Breit-Wigner resonances that ensue from field effects in molecular single electron transistors (SETs). The adiabatic dynamics of a quantum dot elastically attached to electrodes are treated in the Born-Oppenheimer approach. The relation between thermal and shot noise induced by the source-drain voltage V bias is found when the SET operates in a regime tending to thermodynamic equilibrium far from resonance. The equilibration of electron-phonon subsystems produces broadening and doublet splitting of transparency resonances helping to explain a negative differential resistance (NDR)of current versus voltage (I-V) curves. Mismatch between the electron and phonon temperatures brings out the bouncing-ball mode in the crossover regime close to the internal vibrations mode. The shuttle mechanism occurs at a threshold V bias of the order of the Coulomb energy Uc. An accumulation of charge is followed by the Coulomb blockade and broken symmetry of a single or double well potential. The Landau bifurcation cures the shuttling instability and the resonance levels of the quantum dot become split because of molecular tunneling. We calculate the tunnel gaps of conductivity and propose a tunneling optical trap (TOT) for quantum dot isolation permitting coherent molecular tunneling by virtue of Josephson oscillations in a charged Bose gas. We discuss experimental conditions when the above theory can be tested.
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