In this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as a window layer, and Sulfide Cadmium CdS as a Buffer layer, with an efficiency of ƞ=15%. We studied the influence of different layers’ thickness and their defect densities, working temperature and absorber carrier density on the CIS based solar cells. The photovoltaic parameters have been calculated, and we have obtained the optimal values of every constraint cited above. As a result, we obtained a new high efficiency value of 19.71%, under air mass (AM) 1.5 and 100 mW/cm2 illumination and the area of this device was 0.15 cm2 .
This Work represents the influence of some parameters (Temperature, existence of Buffer layer and its thickness), using a Numerical simulation of thin film solar cells, named SCAPS (which is a one-dimensional solar cell capacitance simulator) in modeling of the high efficiency CIGS-based solar cells (with efficiency of η=10.87%).In each case, the photovoltaic parameters have been calculated. It has been concluded that, the efficiency of CIGS-based solar cells is decreasing with increasing of the temperature and the thickness of Zinc Sulfide buffer layer. However, when the buffer layer doesn’t exist in solar cells photovoltaic, we noticed that the efficiency of solar cells is increasing to (η=12.04%) under the AM1.5 spectrum, one sun and at room temperature, with increasing of the short-circuit current density (Jsc), and decreasing of open-circuit voltage (Vco).
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