Optimization of simulations of thickness layers, temperature and defect density of CIS based solar cells, with SCAPS-1D software, for photovoltaic application

Abstract

In this paper, the performance of CIS Based solar cells was investigated, using a simulation program named SCAPS-1D Software (Solar Cells Capacitance Simulator). CIS cell structure is based on Cu(In, Ga), (Se,S)2; which is a semiconductor compound as an absorber layer; un-doped Zinc Oxyd (i) ZnO as a window layer, and Sulfide Cadmium CdS as a Buffer layer, with an efficiency of ƞ=15%. We studied the influence of different layers’ thickness and their defect densities, working temperature and absorber carrier density on the CIS based solar cells. The photovoltaic parameters have been calculated, and we have obtained the optimal values of every constraint cited above. As a result, we obtained a new high efficiency value of 19.71%, under air mass (AM) 1.5 and 100 mW/cm2 illumination and the area of this device was 0.15 cm2 .

Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software

“…The increase in operating temperature provides additional energy to the electrons in solar cells, so at higher temperatures, they are more likely to recombine with holes before being collected by contact [ 35 ], thus having a decrease in Jsc as observed in Fig. 9 a, in addition, by increasing the temperature, the conductivity of the material is affected by the dispersion of the charge carriers due to the generation of phonons [ 26 ], as a result, there is a decrease in PCE, which decreases 0.83% when increasing by 50 K the operating temperature.…”

SCAPS numerical design of MoSe2 solar cell for different buffer layers

“…V oc and J sc is almost unaffected by the variation of buffer layer thickness. FF decreases nonlinearly from 85% to 84.26% as buffer layer thickness is increased from 0.01 to 0.04 µm as series resistance increases [55]. Beyond 0.05 µm of buffer layer thickness, FF is almost constant around 84.16%.…”

“…2 shows the device performance parameters with variable thickness of MoSe 2 absorber layer. If absorber layer thickness is too thin, efficiency is low due to an inadequate absorption of the incident photons with higher recombination rate at the back contact of photogenerated carriers as depletion region is closer [51,55]. As thickness is increased, most of the photons of long wavelengths will be collected and the absorber layer will generate more electronhole pairs which increases efficiency [56].…”