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The proportion of random localized destructive breakdown to stable electroluminescence has been varied continuously by adjusting (1) the recipe used to fabricate dc thin-film electroluminescent devices and (2) the conditions under which they have been tested. It has been shown that neither simple geometrical artifacts nor migration effects can be responsible for localized destructive breakdown. Rather, it has been established that the experiments require an explanation based on a fundamental tendency for dc thin-film electroluminescence to be associated with a current-controlled negative differential resistance which gives rise to filamentary and sometimes destructive current concentration. It is concluded that the existence and origins of such current-controlled negative differential resistance should be tested by theoretical and materials science studies.

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