Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour deposition

Method of Determination of Mn Concentration in ZnS Based on Kinetic Measurements of Luminescence

“…As it is seen in the figure, we have obtained a satisfactory accordance between model and the experiment except point 1 (1wt%). We have not obtained a good agreement using the other data (on τ1 vs. Mn2+ concentration) [1,[3][4][5][6][7][8][9][10]. Our result points out that the proposed method can be applied only when both kinds of manganese centres are excited identically.…”

“…It is well-known that, generally, manganese in ZnS creates two kind of centres: Mn2 + ions and Mn2 +-Mn2 + pairs [2,3,7,15]. So, we can use the above described method to determine concentration of manganese in our e l e c t…”

“…In many papers concentration dependences of various magnitudes are shown. In luminescence, for example, a lifetime dependence on dopant concentration is often measured [1][2][3][4][5][6][7][8][9][10]. This dependence can be used for.…”

A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVD

“…Compositional changes at the heterojunction interface and within the epitaxial layer were studied by EDAX in a JEOL 1200 EX electron microscope and by SIMS in a Cameca IM3-3F instrument again using conditions detailed in an earlier work [9].…”

Chemical Vapor Deposition of Refractory Metals and Ceramics 2. Materials Research Society Symposium Proceedings Held in Boston, Massachusetts on December 4-6, 1991. Volume 250

“…Since the deposition occurs on a molecular scale, layer by layer, the dopants and/or second phase are dispersed uniformly through the material as it grows. For example, manganese doped layers of ZnS and ZnSe have been produced for applications as optoelectronic devices [44]. Also, doping of ZnS and ZnSe with excess zinc, indium or aluminum has been proposed as a technique to obtain conducting layers of ZnS or ZnSe [45,46].…”