We report the first demonstration of a complete 16 x 16 strictly nonblocking guided-wave optical switching system. The system, based on a three-stage Extended Generalized Shuffle Network, includes 448 directional coupler switch elements in 23 packaged modules. The modules are mounted in a single equipment cabinet and are controlled with a PC-based switching algorithm. We report results of extensive measurements on device and system performance. The devices and system exhibited low uniform voltages, low loss, low crosstalk, and broad bandwidth. This lithium niobate based system operated continuously and without maintenance for a period of 20 months.
Three-dimensional features have been milled into optical materials by scanning a submicron focused gallium ion beam. Different shapes are obtained using computer controlled beam placement and dwell time during sputtering. We have used this technique to create micron-sized facets and reflectors in the active areas of semiconductor lasers. Light output and quantum efficiency measurements indicate that these features are of sufficient quality to fabricate monolithic integrated optical devices. Some of the applications currently being investigated are laser-detector pairs, coupled cavity lasers, lasers with integral lenses, distributed feedback lasers, confocal cavities, and laser cavity length tuning.
For the first generation oflightwave devices, semiconductor lasers and detectors have been used as discrete elements. As the technology continues to evolve, integration of light sources with electronics or other optical elements will be necessary. However, an efficient and reliable method for generating laser facets and other optical elements internal to the integrated system must first be de~eloped. Three di~ens~onal features have been milled into optical materials by scanning a submlCron focused gallmm Ion beam. Different shapes are obtained using computer controlled beam placement and dwell time during sputtering. We have used this technique to create micronsized facets and reflectors in the active areas of semiconductor lasers. Light output and quantum efficiency measurements indicate that these features are of sufficient quality to fabricate monolithic integrated optical devices. Some of the applications currently being investigated are laser--detector pairs, coupled cavity lasers, lasers with integral lenses, distributed feedback lasers, confocal cavities, and laser cavity length tuning.
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