Micromachining of optical structures with focused ion beams

Harriott, L. R.; Scotti, R.E.; Cummings, K. D.; Ambrose, A. F.

doi:10.1116/1.583865

Cited by 24 publications

(2 citation statements)

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“…In all cases the technical difficulties and cost of making masks are serious impediments. 5 ͒ Therefore, it is worth devoting some attention to the mask in a charged particle image projection system. Recent experiments and analysis indicate that, in spite of Coulomb interactions, sufficient current can be propagated through these systems to permit exposure times of Ͻ1 s per chip.…”

Section: Introductionmentioning

confidence: 99%

Programmable aperture plate for maskless high-throughput nanolithography

Berry¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability J.One of the most serious challenges to extending lithography ͑by whatever radiation͒ into the sub-100 nm regime is mask manufacturing technology. We propose and analyze a pattern writing concept somewhat like a dot matrix printer that can expose resist with 25 nm pixels at rates needed for production lithography. It consists of a programmable aperture plate which defines an array of 3000ϫ3000, 5 mϫ5 m apertures on 20 m centers which is illuminated by a collimated beam of either ions or electrons. Each aperture can be blanked off by suitable electrodes and is individually addressed. The image of the array is demagnified on the wafer by 200ϫ. The pattern is entered into the array from one edge only and is toggled across the array by shift registers. The wafer is moved in synchronism. Each pixel on the wafer is exposed 750 times by 750 different pixels to accumulate the total dose. If ions are used ͑e.g., H ϩ ͒ and a total maximum current of 3 A is passed down the ion optical column, consistent with space charge limits, then the writing speed with 25 nmϫ25 nm pixels on the wafer is 1 cm 2 /s for an ion resist sensitivity of 3 C/cm 2 . The aperture plate can be fabricated from a sandwich of 3 Si membranes and will exploit the high aspect ratio etching of ͗110͘ Si to achieve the structures that hold the blanking plates. The aperture array will measure 6 cmϫ6 cm. The shift register circuits clocking at about 10 MHz will be built in the spaces between the apertures and are feasible with state of the art devices.

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Section: Introductionmentioning

confidence: 99%

Programmable aperture plate for maskless high-throughput nanolithography

Berry¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…We speculate that the change of etching rate is due to redeposition of sputtered atoms. The redepostion occurs during ion-beam irradiation onto objects (7) - (9) . After sputtered atoms are removed from surface by ion-beam irradiation, the sputtered atoms are not only evacuated by a vacuum pump but are also adhered on lateral faces of the craters.…”

Section: Quantitative Analysis Of Etching Propertiesmentioning

confidence: 99%

Optimization of Processing Condition for Deposition of DLC Using FIB-CVD Method

Sakamoto

Kogo

Yagi

et al. 2006

JSME Int. J., Ser. C

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The processing conditions for deposition of DLC using the FIB-CVD method were examined in detail. Microstructures and mechanical properties of the DLC specimens were also investigated. The deposition process of the DLC specimen is varied by the probe current of the ion beam. Through these examinations, optimum deposition condition was discussed. HRTEM image and diffraction pattern showed that the DLC specimen had amorphous structures. Young's modulus and Vickers hardness were in the range of 110 -140 GPa and 1 100 -1 400 HV, respectively. These mechanical properties were obtained similarly even though the processing conditions were changed in our study.

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A new method of optical coupling between waveguides and photodiodes using waveguide‐type layered optical couplers

Koike

Takahara

Katsura

1992

Electron Comm Jpn Pt II

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In an attempt to develop a waveguide‐type layered optical coupler which has the same cross‐section dimension of dielectric layers as the optical waveguide, a new optical coupling system is discussed. This system is designed to couple the flip‐chip‐mounted photodiode with the waveguide. Because the proposed couplers can be manufactured in quantity, they have the potentiality for applying to optical interconnection modules where a large‐scale and a large number of optical connections are required. The present paper discusses the performance of the waveguide‐type layered optical coupler based on the analysis by the beam propagation method (BPM) and on the experimental results. Both the power transfer from the waveguide to the coupler and the radiation process from the coupler to the photodiode are both clarified. These results indicate the optical coupling between the photodiode and the optical waveguide. Further, the optimum coupler‐structure for the maximum power transfer ratio from the waveguide to the coupler, which performance is least sensitive to the thickness error, is discussed. The coupling efficiency of 22 percent for the Gediode is obtained.

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Micromachining of optical structures with focused ion beams

Cited by 24 publications

References 0 publications

Programmable aperture plate for maskless high-throughput nanolithography

Programmable aperture plate for maskless high-throughput nanolithography

Optimization of Processing Condition for Deposition of DLC Using FIB-CVD Method

A new method of optical coupling between waveguides and photodiodes using waveguide‐type layered optical couplers

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