Comparative work of with/without erbium- (Er-) doped vanadium pentoxide (V2O5) and titanium dioxide (TiO2) thin films were carried out via sol-gel technique by dissolving erbium (III) nitrate pentahydrate (Er(NO3)3·5H2O) in vanadium (V) oxoisopropoxide (OV[OCH(CH3)2]3) and titanium (IV) isopropoxide (Ti[OCH(CH3)2]4). Effect of Er doping was traced by Fourier transform IR (FTIR), thermogravimetric/differential thermal (TG/DTA), and photoluminescence measurements. UV-Vis transmission/absorption measurement indicated a blue shift upon Er doping in V2O5film due to the softening of V=O bond while appearance of typical absorption peaks in Er-doped TiO2film. Granule size of the films increased (reduced) upon Er substitution on host material compared to undoped V2O5and TiO2films, respectively.
Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO 2) in the form of MOS (metal(Al)/SiO 2 /p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295-380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).
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