A systematic study of the noise performances of polycrystalline silicon thin film transistors is presented. The drain current spectral density of these devices shows an evident 1/ f behavior and scales, when operating in the linear regime, with the square of the mean value of the drain current. The origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide traps.
A systematic study of the noise performances of polycrystalline silicon (polysilicon) thin-film transistors (TFTs) made by excimer laser crystallization is presented. The drain current spectral density of these devices shows an evident 1/f behavior and the origin of the noise was attributed to carrier number fluctuations. The flat-band voltage spectral density was found to be strongly correlated with the field-effect mobility, suggesting that the microscopic mechanism causing the carrier number fluctuations involves the localized states present at the grain boundaries. The noise level in the devices with the best electrical characteristics is comparable with that observed in c-Si metal–oxide–semiconductor field effect transistors, a major improvement if compared to polysilicon TFTs made by solid-phase crystallization.
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