The effects of through gate oxide implant on gate oxide integrity and defect density have been investigated. It is observed that through gate implant can reduce the off-state leakage current 1 to 2 order, giving the same Vt value, and can maintain much tighter Vt spread control without sacrificing the GO1 and yield performance. These attractive advantages make the through gate oxide implant process a promising candidate for high speed, low power applications.
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