40V High Side PSI5 Transceiver with &lt;tex&gt;$65\text{dB}\mu \text{V}$&lt;/tex&gt; Conducted Emission Level in a BiCMOS Process

Easwaran, Sri Navaneeth; Chen, A.; Duryea, Timothy P.; Rollman, D.

doi:10.1109/bcicts.2018.8551102

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 2018

DOI: 10.1109/bcicts.2018.8551102

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40V High Side PSI5 Transceiver with <tex>$65\text{dB}\mu \text{V}$</tex> Conducted Emission Level in a BiCMOS Process

Sri Navaneeth Easwaran

A. Chen

Timothy P. Duryea

et al.

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40V High Side PSI5 Transceiver with <tex>$65\text{dB}\mu \text{V}$</tex> Conducted Emission Level in a BiCMOS Process

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