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We have developed a 3D MOSCAP to characterize sidewall dielectric electrical performance to help gauge the quality and reliability of non-planar devices, such as FinFETs. The 3D MOSCAP can be used for process and materials development for high-Κ metal gate, spacer, and liner applications for 3D monolithic integration for future generation devices. In comparison, a traditional 2D (planar) MOSCAP is for characterization of dielectrics in the horizontal plane only. This study used different oxides as examples to compare the sidewall dielectric quality and electrical performance, and compare with that of oxide on a horizontal surface. A data analysis methodology is developed and demonstrated to extract sidewall dielectric properties from measured electrical results.

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