3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration

Wood, Bingxi; McDougall, Brendan; Chan, Osbert; Dent, A.C.; Ni, Chi-Nung; Hung, R.; Chen, Hao; Xu, Ping; Nguyen, Phong; Okazaki, Motoya; Mao, Daxin; Xu, Xumou; Ramiraz, Ricardo; Cai, Man-Ping; Jin, Miao; Lee, Won; Noori, Atif; Shek, M.; Chang, Chorng‐Ping

doi:10.1149/1.3568849

Cited by 2 publications

(1 citation statement)

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“…3D transistors FinFET 25 and 3D NAND memories 26 ) and of new 3D functional nanomaterials 27,28,29 is prompting for a resolution of the above mentioned challenge. 30 The major issue posed by non-planar heterogeneous systems is that the measured microwave signal shows contributions due to both changes in the sample topography and changes in the local electric permittivity properties, whose disentanglement is rather complex. 31 Here, we present a method to disentangle topographic and electric permittivity variations in the particular case of thin film heterogeneous samples with variable thickness.…”

Section: Introductionmentioning

confidence: 99%

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

Biagi

Badino

Fabregas

et al. 2017

Phys. Chem. Chem. Phys.

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We obtained maps of the electric permittivity at ~19 GHz frequencies on non-planar thin film heterogeneous samples by means of combined atomic force-scanning microwave microscopy (AFM-SMM). We show that the electric permittivity maps can be obtained directly from the capacitance images acquired in contact mode, after removing the topographic cross-talk effects. This result demonstrates the possibility to identify the electric permittivity of different materials in a thin film sample irrespectively of their thickness by just direct imaging and processing. We show, in addition, that quantitative maps of the electric permittivity can be obtained with no need of any theoretical calculation or complex quantification procedure when the electric permittivity of one of the materials is known. To achieve these results the use of contact mode imaging is a key factor. For non-contact imaging modes the effects of the local sample thickness and of the imaging distance makes the interpretation of the capacitance images in terms of the electric permittivity properties of the materials much more complex. Present results represent a substantial contribution to the field of nanoscale microwave dielectric characterization of thin film materials with important implications for the characterization of novel 3D electronic devices and 3D nanomaterials.

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Section: Introductionmentioning

confidence: 99%

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

Biagi

Badino

Fabregas

et al. 2017

Phys. Chem. Chem. Phys.

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Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Ryan

Olszewski

Houlihan

et al. 2015

Applied Physics Letters

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Dielectric charging at low electric fields is characterized on radio-frequency microelectromechanical systems (RF MEMS) capacitive switches. The dielectric under investigation is silicon dioxide deposited by plasma enhanced chemical vapor deposition. The switch membrane is fabricated using a metal alloy which is shown to be mechanically robust. In the absence of mechanical degradation, these capacitive switches are appropriate test structures for the study of dielectric charging in MEMS devices. Monitoring the shift and recovery of device capacitance-voltage characteristics revealed the presence of a charging mechanism which takes place across the bottom metal-dielectric interface. Current measurements on metal-insulator-metal devices confirmed the presence of interfacial charging and discharging transient currents. The field-and temperature-dependence of these currents is the same as the well-known transient stress-induced leakage current (SILC) observed in flash memory devices. A simple model was created based on established transient SILC theory which accurately fits the measured data and reveals that charge exchange at the bottom metal-dielectric interface is responsible for charging currents and pull-in voltage changes in these MEMS devices. (C) 2015 AIP Publishing LLC

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3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration

Cited by 2 publications

References 1 publication

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

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