Using Raman and infrared transmission spectroscopy, the vibrational properties of siloxene (SigOsHs) and its derivatives are investigated and interpreted in terms of various structural modifications of siloxene which have been proposed in the past. On the basis of experimental and theoretical investigations siloxene is found to be a mixture of Sis rings and/or linear Si chains interconnected by oxygen, and Si planes terminated by H and OH. The inBuence of thermal annealing, chemical treatment, and laser irradiation on the structure of siloxene is discussed in terms of the corresponding changes of the vibrational spectra and the x-ray-di8'raction patterns. The vibrational properties of siloxene are very similar to those of electrochemically anodized porous Si. Raman, infrared transmission, and photoluminescence measurements of the two classes of materials are compared and a possible mechanism for the efBcient luminescence in porous Si is discussed in light of the similarities between siloxene and porous Si.

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Hydrogen depth profiles in highly doped p-type silicon are obtained from the analysis of infrared reflectance spectra of H-passivated samples. From these profiles, H-diffusion coefficients are calculated for different temperatures and dopant concentrations. The results are explained with the assumption that hydrogen diffusion is limited by trapping at the acceptor sites. A binding energy of 0.6 eV is found for B-H complexes, in agreement with previous ab initio calculations.

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