The analysis of the electronic states of a quantum dot of InAs grown on a GaAs substrate has been studied for different geometries. We did the calculation with each type of geometry we based on the Schrödinger equation for stationary particle and we used "Comsol" for calculations. We calculated energy values as a function of each of the parameters: length, width and thickness of the wetting layer where other parameters are held constant.
This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, Bi = 8%) energy bandgap is O.90eV. If we increase the two concentrations (N = 3%, Bi = 12%) the gap equal to O.62eV. This allows us to grow the absorption and performance. For (N = 2%, Bi = to) was obtained in an acquiesce of approximately 24.5%. This study allows us to improve the efficiency of solar cells and multi-quantum wells.
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