Transport properties of the deformed quaternary InGaAsP epitaxied on different substrates

Tarbi, A.; Chtouki, T.; Benahmed, A.; Elkouari, Y.; Erguig, H.; Migalska‐Zalas, A.

doi:10.1016/j.ijleo.2022.169657

Cited by 13 publications

(2 citation statements)

References 17 publications

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“…Hachimi et al [26] investigated CsPbCl3 as an absorber layer in a perovskite solar cell with an FTO/SnO2/CsPbCl3/Cu2O/Au structure and achieved a VOC of 1.80 V, a JSC of 9.14 mA/cm 2 , an FF of 86.06%, and a PCE of 14.20%. The introduction of lattice mismatch has been investigated for its potential to improve the efficiency of perovskite solar cells by causing material deformation and increasing the valence band degeneracy [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling and DFT study for a CsPbCl3 lead-based perovskite solar cell using Zn-doped Cu2O as HTL

Hachimi,

Tarbi,

El-Mrabet

et al. 2024

Preprint

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In recent years, inorganic perovskite solar cells have attracted increasing interest in the field of photovoltaics. This study focused on the optimization of these cells using CsPbCl3 as the absorber material through extensive simulations using SCAPS-1D software. In addition, first-principles calculations were performed using density functional theory (DFT) to explore the properties of CsPbCl3, such as its structure, energy band, total and partial density of states, and their optical properties. Different ETL layers, such as C60, ZnSe, PCBM, SnO2 and WS2, and an inorganic HTL composed of zinc-doped Cu2O (7%), were evaluated. The results showed that using SnO2 as the ETL yielded the best performance. The study also examined the impact of various critical parameters, such as the thickness and defect density of the absorber layer, donor doping density in this layer, series and shunt resistances, and operating temperatures, on the overall cell performance. The optimum device configuration, FTO/SnO2/CsPbCl3/Cu2O:Zn(7%)/Au, showed a PCE of 24.23%, FF of 88.45%, VOC of 1.567 V, and JSC of 17.48 mA/cm2. The results underline the crucial importance of CsPbCl3 for optical applications, particularly in solar energy conversion, highlighting the considerable potential of this material.

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Section: Introductionmentioning

confidence: 99%

Numerical modeling and DFT study for a CsPbCl3 lead-based perovskite solar cell using Zn-doped Cu2O as HTL

Hachimi,

Tarbi,

El-Mrabet

et al. 2024

Preprint

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show abstract

“…The small size of nitrogen compared to arsenic causes tensile strain in the lattice and a large spin-orbit division [ 3 , 4 ]. To explore the potential of this ternary compound, many reports have shown that nitrogen considerably narrows the bandgap energy, shifting the conduction band downwards [ 5 ], and adding 0%–5% nitrogen in GaAs shifts the bandgap energy at a rate of approximately 180 meV per 1% nitrogen [ 6 , 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks

Tarbi

Chtouki

Elkouari

et al. 2022

Heliyon

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Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling

Tarbi¹,

Chtouki

Sellam³

et al. 2023

J Comput Electron

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Transport properties of the deformed quaternary InGaAsP epitaxied on different substrates

Cited by 13 publications

References 17 publications

Numerical modeling and DFT study for a CsPbCl3 lead-based perovskite solar cell using Zn-doped Cu2O as HTL

Numerical modeling and DFT study for a CsPbCl3 lead-based perovskite solar cell using Zn-doped Cu2O as HTL

Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks

Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling

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