We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1−xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.
We discuss the current noise characteristics of nano-scale devices by employing the quantum transport models based upon the nonequilibrium Green's function model (NEGF) and the Monte Carlo (MC) device simulation. In this paper the NEGF is used to study the shot noise suppression caused by the quantum mechanical correlations of electrons in semiconductor nano-scale devices, so that the current noise is discussed at low temperature. On the other hand, the quantum corrected MC model is developed to simulate practical semiconductor devices at normal temperatures, and the current noise spectral density of a nano-scale Si-MOSFET structure is presented.
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