Electric-pulse-induced reflectance change in the thin film of perovskite manganite

Abstract

We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1−xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.

Electric-pulse-induced resistive switching effect enhanced by a ferroelectric buffer on the Pr0.7Ca0.3MnO3 thin film

“…[2][3][4][5][6][7][8][9][10][11] Interestingly, this electric-pulse-induced resistance ͑EPIR͒ change is reversible and nonvolatile, exhibiting two stable ͑higher and lower͒ resistance states after the voltage pulse is removed. Such a resistance switching effect has received much attention due to its potential application for resistive memory.…”

Direct resistance profile for an electrical pulse induced resistance change device

“…Studying the EPIR effect is not only important for understanding the physics of the EPIR effect, and the importance of the CMR effect in its operation, but is also critical for advancing high density RRAM that can overcome shortcomings in current semiconductor memories. [5] Currently, however, there are questions as to whether or not the EPIR mechanism is a bulk [2,7] or interface effect. [8] Underlying such concerns is a more profound question of symmetry of the device.…”

Effect of oxygen annealing on Pr0.7Ca0.3MnO3 thin film for colossal electroresistance at room temperature

“…[8][9][10][11][12][13][14][15][16][17] Among these properties, CER has recently been explored in detail because of its potential for device applications such as nonvolatile resistance random access memories ͑ReRAMs͒. [8][9][10][11][12][13][14][15][16][17] Liu et al reported that reversible resistance change can be induced by applying pulsed voltage at room temperature in the PCMO layer sandwiched between a Ag top electrode and a YBa 2 Cu 3 O 7 or Pt bottom electrode. 9 Although they discovered CER phenomenon of the PCMO films at room temperature, its mechanism is still unidentified.…”

“…10,11 So, it is important to elucidate the mechanism of the resistive switching of the PCMO films; however, a few research results on switching mechanism were reported. [10][11][12][13][14][15][16][17] And also, from the viewpoint of device application, it is important to fabricate PCMO thin film with good resistive switching characteristics. Therefore, in this work, we studied the effect of oxygen annealing on the resistive switching characteristics of the PCMO thin film and tried to elucidate the mechanism of the resistive switching of the PCMO thin film.…”