The measurements of Hall effect, conductivity, and photoresponse were performed for MnxCd1−x Te crystals with x = 0.05, 0.10, 0.15, and 0.20. The investigated crystals were subjected to thermal treatments in the presence of Cu, Au, As, Cd, and in vacuum. The annealings with dopants resulted in substantial increase of resistivity. The activation energies of acceptors were determined. It is suggested that the observed levels are associated with complexes present in MnxCd1−x Te crystals.