Electrical properties of p-type MnxCd1−x Te crystals

Abstract

The measurements of Hall effect, conductivity, and photoresponse were performed for MnxCd1−x Te crystals with x = 0.05, 0.10, 0.15, and 0.20. The investigated crystals were subjected to thermal treatments in the presence of Cu, Au, As, Cd, and in vacuum. The annealings with dopants resulted in substantial increase of resistivity. The activation energies of acceptors were determined. It is suggested that the observed levels are associated with complexes present in MnxCd1−x Te crystals.

Growth and characterization of In doped Cd0.8Mn0.2Te single crystal

“…However, further work need to be carried out to get satisfactory single crystal of Cd 1Àx Mn x Te. Meanwhile, the as-grown undoped Cd 1Àx Mn x Te crystal is usually of p-type with low resistivity [14]. In order to make good X-ray and g-ray detectors, the material must have a high resistivity to reduce electrical noise from In this paper, an In-doped Cd 0.8 Mn 0.2 Te (CdMnTe:In) ingot was grown by the VB method.…”

Morphological And Impedance Studies In Diluted Mn-doped CdS Nanocomposites

“…Diluted magnetic semiconductors (DMS) have been studied widely during the past two decades in view of their intriguing properties [1][2]. On the other hand, consequent upon the advent of nanomaterials, DMS in nano-form have in recent years attracted significant attention of the technologists, because of their relevance to the development of nanotechnology.…”

Minima of the muon depolarization rate inCd1−xMn

“…A good candidate for a trapping center is the cation vacancy which in CdTe and Cd 1Ϫx Mn x Te forms acceptor centers when pairing with impurities. [15][16][17][18][19] The anomalies observed in the region of the minima may then result from the muon trapping and detrapping from such acceptors.…”