A method of the coating thickness and transmittance control during the film deposition is proposed. The photometric setup on the basis of vacuum resistive evaporation installation is presented. The stages of the spectral data processing algorithm are described. The substrate holder carousel is shown as part of the installation.
At the present stage of progress the development of ion‐plasma technological devices requires the use of express analysis of the generated plasma flux composition. Spectrometric equipment which can be embedded into the technological process to determine the composition of the gas mixture and to analyze the emission spectra of low temperature plasma generated by magnetron sputtering systems and vacuum arc sources is presented. The method of spectral interferometry that allows to control thickness and refractive index of the deposited films with depth from fractions to hundreds of micrometers is described.
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