N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation.

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Current–voltage and photoelectrical characteristics of InAs0.7Sb0.3 photodiodes grown onto InAs substrates are investigated in the interval of 212–330 K, i.e., the “thermoelectrical temperature range”. The impacts of mesa diameter, buffer layer thickness, and cooling on the zero‐bias resistance and spectral responsivity are described and analyzed. At low temperatures, the dynamic zero‐bias resistance dominat the serial one, resulting in the specific detectivity at 6.5 µm and at T = 233 K being as high as 3.2 · 108 cm Hz1/2 W−1 for a flat‐plate photodiode.

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