Исследование ионной имплантации азота через слой нитрида кремния для межприборной изоляции силовых GaN/Si-транзисторов

Abstract

This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage.