Исследование вольт-амперных характеристик новых гетероструктур MnO-=SUB=-2-=/SUB=-/GaAs(100) и V-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-/GaAs(100), прошедших термическую обработку

Abstract

Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V_2O_5 and MnO_2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage ( I – V ) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V_2O_5 facilitates the more intense (in comparison with MnO_2) chemical bonding of arsenic at the internal interface with the formation of As_2O_5. As a result, thermally oxidized V_2O_5/GaAs heterostructures exhibit higher breakdown voltages.