Исследование активных областей на основе многопериодных сверхрешеток GaAsN/InAs

Abstract

The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular−beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about 90 meV.

Моделирование Зонной Структуры Сверхрешеток На Основе "Разбавленных" Нитридов

“…Во всех случаях нами рассматривались СР, состоящие из слоев GaAsN/In(Ga)As. Мольная доля азота в слоях GaAsN была подобрана на основе анализа пика в спектрах ФЛ [56,57]. Для мольной доли индия в In(Ga)As были предложены два состава: InAs (СР1, СР3) и In 0.8 Ga 0.2 As (СР2, СР4).…”