Abstract:It has been shown experimentally that nickel clusters on the surface of a silicon sample contain a large amount of oxygen and recombination impurities - Cu, Fe, Cr, which shows good gettering properties of clusters. The optimum temperature of nickel diffusion into silicon is determined - Т=800-850 ° С. Doping with impurity nickel atoms with the formation of clusters makes it possible to increase the lifetime of nonequilibrium charge carriers in the base of a solar cell by up to 2 times, while the formation of … Show more
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