Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

Egamberdiev, B. E.; Utamurodova, Sh. B.; Тачилин, С. А.; Karimov, M. A.; Rashidov, K. Yu.; Kakhramonov, Alisher; Kurbanov, M. K.; Saidov, D. Sh.; Turopova, S. U.

doi:10.3103/s0003701x22040065

Cited by 4 publications

(2 citation statements)

References 22 publications

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“…In recent years, silicon structures have been actively studied both theoretically and experimentally in order to realize their possible applications. Structured silicon is currently of great interest, since silicon itself is an extremely promising material not only for electronics, but also for optoelectronics and solar cells [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

Utamuradova,

Daliev,

Naurzalieva

et al. 2023

East Eur. J. Phys.

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Silicon doped with gadolinium and silver impurities were studied using a Renishaw InVia Raman spectrometer. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. Some changes are observed in the Raman spectra of gadolinium-doped silicon samples compared to the initial sample. It has been experimentally found that an increase in the silver impurity concentration in gadolinium-doped silicon leads to a smoothing of the Raman spectrum, which indicates the formation of a more perfect crystal structure.

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Section: Introductionmentioning

confidence: 99%

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

Utamuradova,

Daliev,

Naurzalieva

et al. 2023

East Eur. J. Phys.

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show abstract

“…Recent advances in these areas are related to the physics of low-dimensional structures and the creation of technologies for obtaining nanostructures with fundamentally new functionality for nano-and optoelectronics, communications, new technologies, measuring equipment, etc. Structured silicon is currently of great interest, since Si itself is an extremely promising material not only for electronics, but also for optoelectronics and solar cells [2,5]. In this regard, studies of the formation of low-dimensional objects and the study of their influence on the electrophysical, optical, photoelectric, and magnetic properties of semiconductors are topical tasks of today [4,[6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

Daliev,

Utamuradova,

Bahronkulov

et al. 2023

East Eur. J. Phys.

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In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si<Lu> and p-Si<Lu>), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands.

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Exploring electron energy dependencies in the formation of surface charge on ZnO crystals

Sharopov,

Samiev,

To'raev

et al. 2024

Vacuum

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Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

Cited by 4 publications

References 22 publications

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

Exploring electron energy dependencies in the formation of surface charge on ZnO crystals

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