Анализ влияния спейсерных слоев на нелинейные искажения вольт-амперных характеристик pHEMT на основе соединения GaAlAs/InGaAs

Abstract

The work is devoted to the results of modeling of the parameters of pHEMT structures based on the AlGaAs / InGaAs / GaAs compound using a self-consistent solution of the Schrödinger and Poisson equation. Based on numerical calculations, a method for analyzing nonlinear distortions of transfer I-V characteristics is proposed. The influence of the spacer layers and the degree of doping of the δ-layer on the nonlinearity of the I – V characteristic is estimated.