μm-resolved high resolution X-ray diffraction imaging for semiconductor quality control

Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

“…This difference already was proven by several authors by strain mapping and Δd/d mapping acquired with a rocking curve imaging technique. [13][14] …”

“…More recently, synchrotron-based x-ray topography techniques (white beam topography and monochromatic beam topography) have been widely used. [10][11][12][13][14] The differences between these approaches are their sensitivity to Δd/d and the type of defect to be detected.…”

Sequential x-ray diffraction topography at 1-BM x-ray optics testing beamline at the advanced photon source

“…Sequential X-ray diffraction topography is a recent development [1] which utilizes digital X-ray area detectors to obtain a sequence of X-ray diffraction topographs at various angular positions on the rocking curve of a studied crystal. This method is often referred to as rocking curve imaging since the obtained sequence can be sorted for each detector pixel, thus enabling evaluation of local rocking curves and mapping their parameters (peak reflectivity, width and angular peak position) over the exposed crystal area.…”

“…Furthermore, data collected at different azimuthal rotations around the sample surface normal can be used to decompose the maps of angular peak position into maps of the lattice parameter variation and lattice misorientations (e.g., [2,3]). Since its introduction, rocking curve imaging has been used to perform detailed characterization of semiconductor single crystals such as InP, SiC, GaAs [1,3,5] and single crystal diamond [2,6,7,8]. In particular, detailed characterization of single crystal diamond X-ray optics provided by the technique has been found valuable for implementation of novel diamond X-ray optics [7,8,9].…”

Spatial micrometer-resolution three-dimensional local lattice misorientation determination of GaAs wafers by synchrotron radiation rocking-curve imaging

“…In the past years, we have developed the RCI as a tool for wafer crystalline perfectness characterization by combining digital topography and conventional wafer Bragg-diffraction rocking curves recording [1] and pushed its limits to a micrometer scale resolution as to study crystalline properties of GaN overgrown layers [2]. We have extended its experimental setup and image analysis routines to reveal the complete three-dimensional tensor of local lattice misorientation in wafers for macrodefects of large local rotation angles with respect to the undisturbed region [3], and to determine dislocation densities [4].…”