β-SiC Thin film growth using microwave plasma activated CH4-SiH4 sources

Kim, H.S; Park, Y.J; Choi, In–Hoon; Baik, Young‐Joon

doi:10.1016/s0040-6090(98)01538-7

Cited by 16 publications

(6 citation statements)

References 15 publications

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“…One of the most successful techniques for the preparation of diamond-SiC composites is the co-deposition of diamond and β-SiC by MPCVD in H 2 -CH 4 -tetramerylsilane (Si(CH 3 ) 4 , TMS) 27) or H 2 -CH 4 -silane (SiH 4 ) 39) mixtures. The main purpose of this technology is to control the stress distribution on the cross-section of the films, reduce the maximum/peak stress, improve the toughness of the diamond films, and thus increase the adhesion force between the diamond films and the substrate.…”

Section: Co-deposition Of Diamond and β-Sicmentioning

confidence: 99%

“…Although only a few percent of CH 4 in H 2 was used for the diamond formation process, the addition of a rather low TMS concentration (1%-3% TMS versus CH 4 and ∼1% CH 4 versus H 2 ) is sufficient to make the growth rate reached 100 nm h −1 , 27,28) If H 2 -CH 4 -SiH 4 mixtures were selected, only a small amount (<1%) of SiH 4 is required. 39) Sedov's team demonstrated that in the process of depositing diamond films by MPCVD, a very low percentage of Si from SiH 4 (SiH 4 /CH 4 < 1%, SiH 4 /H 2 < 0.06%) incorporated in polycrystalline 40) and single-crystal diamond. 41) The use of TMS as a precursor restricted the deposition of SiC when the maximum Si/C ratio in the gas of 0.25 (in TMS-H 2 -CH 4 mixture).…”

Section: Co-deposition Of Diamond and β-Sicmentioning

confidence: 99%

See 1 more Smart Citation

MPCVD diamond-SiC composite stacks for enhanced thermal performance: a concise review

Wang

Yan

et al. 2023

Jpn. J. Appl. Phys.

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Diamond-silicon carbide (SiC) composite stacks is composed of two kinds of wide bandgap materials, each of which has excellent thermal, electronic, optical and mechanical properties, and is considered as an ideal material for heat dissipation. For optimal application, the interface between the two materials needs to be almost void free and of high-quality growth. Traditional methods such as sintering and liquid/vapor phase infiltration have many defects, but the preparation of diamond-SiC composites by microwave plasma chemical vapor deposition (MPCVD) method can effectively solve these problems, overcome the interface defects, and break through the size limitation. In this review, various techniques for preparing diamond-SiC composites by MPCVD will be discussed. It mainly includes co-deposition of diamond and cubic polytype β-SiC, deposition of diamond films on β-SiC/Si substrates and deposition of diamond films on 4H-SiC and 6H-SiC substrate. The implementation methods, research progress and application trend of each technique are reviewed in detail.

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Section: Co-deposition Of Diamond and β-Sicmentioning

confidence: 99%

Section: Co-deposition Of Diamond and β-Sicmentioning

confidence: 99%

MPCVD diamond-SiC composite stacks for enhanced thermal performance: a concise review

Wang

Yan

et al. 2023

Jpn. J. Appl. Phys.

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“…Plasma chemical vapor deposition (CVD), which uses the high chemical reactivity of plasma, is used in the formation of films and etching and has become an indispensable technology for the manufacturing of solar cells and liquid crystal displays. And it is being widely researched as a method for synthesizing new materials [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A Practical Electrode for Microwave Plasma Processes

Toyota

Nomura

Mukasa

2013

IJMSA

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In-liquid plasma chemical vapor deposition (CVD) method is useful for high speed production of high quality diamond films. The method is simple and secure comparing usual CVD methods. In this paper, new electrodes for in-liquid plasma CVD by receiving microwaves are developed and introduced. This paper examines the fabrication of electrodes that enable the generation of plasma by effectively receiving microwaves. The fabricated electrodes are used to generate plasma in a waste liquid and the performance of the electrode is evaluated by the speed at which gases are created by decomposing the liquid. By using experiments in decomposing n-dodecane using in-liquid plasma and through detailed investigation into the length of the electrode used, it is confirmed that the half wavelength is optimal for the generation of plasma. The fabricated electrodes are used to test the formation of diamond film by plasma CVD in the microwave oven. Diamond film is successfully created inside microwave oven by using the vapor from a mixture of methanol and ethanol.

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“…Its unique physical and optical properties such as a wide band gap, excellent thermal conductivity, high breakdown electric field, and high saturated electron drift velocity make it a suitable semiconductor material for operating at high temperature, high frequency, high power, and chemically hostile environment. Growth of high-quality SiC is generally realized only at very high substrate temperatures, typically exceeding 700°C [6][7][8], which is at least a couple of hundred degrees higher than the requirements of the emerging sub-60 nm semiconductor technology [9] and consequently hinders the extensive applications of SiC. Recently, several research groups have reported that nanocrystalline SiC can be synthesized by plasma enhanced chemical vapor deposition (CVD) at low substrate temperatures (≤500°C) from different feedstock gases (such as monomethylsilane, diethylsilane, silane and methane gases) heavily diluted with hydrogen [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%