Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Cheng, Qijin; Xu, Shaohui; Chai, John C.; Huang, Shiyong; Ren, Yanzhi; Long, Jidong; Rutkevych, P.P.; Ostrikov, Kostya Ken

doi:10.1016/j.tsf.2007.10.091

Cited by 18 publications

(3 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, it was shown that low-frequency (460 kHz) inductively coupled plasma (ICP) CVD possesses a number of advantages for the fabrication of nanostructured silicon carbide films [17][18][19][20][21][22]. The low-frequency ICP system working in the H-mode discharge features low plasma sheath potentials at the deposition substrate, provides an independent control of the ion/radical fluxes and ion-bombarding energy and makes it possible to generate quiescent and stable plasmas with densities 1-2 orders of magnitude higher than in capacitive discharges [23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Cheng

Long

et al. 2008

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

It is commonly believed that in order to synthesize high-quality hydrogenated amorphous silicon carbide (a-Si1−xCx : H) films at competitive deposition rates it is necessary to operate plasma discharges at high power regimes and with heavy hydrogen dilution. Here we report on the fabrication of hydrogenated amorphous silicon carbide films with different carbon contents x (ranging from 0.09 to 0.71) at high deposition rates using inductively coupled plasma (ICP) chemical vapour deposition with no hydrogen dilution and at relatively low power densities (∼0.025 W cm−3) as compared with existing reports. The film growth rate Rd peaks at x = 0.09 and x = 0.71, and equals 18 nm min−1 and 17 nm min−1, respectively, which is higher than other existing reports on the fabrication of a-Si1−xCx : H films. The extra carbon atoms for carbon-rich a-Si1−xCx : H samples are incorporated via diamond-like sp3 C–C bonding as deduced by Fourier transform infrared absorption and Raman spectroscopy analyses. The specimens feature a large optical band gap, with the maximum of 3.74 eV obtained at x = 0.71. All the a-Si1−xCx : H samples exhibit low-temperature (77 K) photoluminescence (PL), whereas only the carbon-rich a-Si1−xCx : H samples (x ≥ 0.55) exhibit room-temperature (300 K) PL. Such behaviour is explained by the static disorder model. High film quality in our work can be attributed to the high efficiency of the custom-designed ICP reactor to create reactive radical species required for the film growth. This technique can be used for a broader range of material systems where precise compositional control is required.

show abstract

Section: Introductionmentioning

confidence: 99%

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Cheng

Long

et al. 2008

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Nanocrystalline materials are one of the most investigated materials in current research. There are several routes to obtain nanocrystalline coatings such as pulsed laser deposition, [1][2][3] electrodeposition, [4][5][6][7] chemical vapour deposition [8][9][10] and thermal spray. [11][12][13][14] Among them, electrodeposition route is one of the convenient and economical methods to produce bulk, metallic, dense and nanocrystalline, pure metal or alloy or composite.…”

Section: Introductionmentioning

confidence: 99%

Effect of current density and grain refining agents on pulsed electrodeposition of nanocrystalline nickel

Bhardwaj

Balani

Balasubramaniam

et al. 2011

Surface Engineering

View full text Add to dashboard Cite

Nanocrystalline nickel was electrodeposited on copper substrate using a Watt's bath at a temperature of 50uC. The effect of pulsed current density (up to 1?5 A cm 22 ) and role of organic additives (namely saccharin and sodium citrate) in the deposition bath was evaluated for rendering grain refinement. The deposited samples were characterised for current efficiency, colonial morphology, crystallite size, texture, coercivity and nanomechanical properties (such as Young's modulus and hardness). Results were compared with deposition using direct current, and utilising annealed Cu substrate. The smallest crystallite size of 22 nm was obtained, and the lowest coercivity equaled 22 Oe for the sample deposited using pulsed current with the peak current density 1 A cm 22 and 10 g L 21 saccharin addition. Annealing of the substrate has shown to increase the Young's modulus of electrodeposited Ni by 10?2%, which increases further by 14?4% with saccharin addition when compared to those of deposits without saccharin addition.

show abstract

“…The diamond lattice consists of two interpenetrating face centered cubic Bravais lattices displaced along the body diagonal of the cubic cell by one quarter of the length of the diagonal. Nowadays, hydrogenated nanostructured silicon with grains in nanometer size has attracted more attention in optoelectronic and microelectronic devices for its superior properties (Kanicki, 1991(Kanicki, , 1992Canham , 1990 ;Lin et al, 2006, Funde et al, 2008, Cheng et al, 2008. Moreover, great efforts have been devoted to photoluminescence of siliconbased materials for developing integrated optoelectronics with the standard silicon verylarge-scale integration technology (Canham, 1990).…”

Section: Introductionmentioning

confidence: 99%

Air Exposure Improvement of Optical Properties of Hydrogenated Nanostructured Silicon Thin Films for Optoelectronic Application

Ali¹

2011

Optoelectronics - Materials and Techniques

View full text Add to dashboard Cite

Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Cited by 18 publications

References 27 publications

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Effect of current density and grain refining agents on pulsed electrodeposition of nanocrystalline nickel

Air Exposure Improvement of Optical Properties of Hydrogenated Nanostructured Silicon Thin Films for Optoelectronic Application

Contact Info

Product

Resources

About