β- Ga 2 O 3 nanowires synthesized from milled GaN powders

Abstract

White-colored materials synthesized by a thermal annealing of milled GaN powders at 930 °C in a nitrogen atmosphere were identified to be monoclinic β-Ga2O3 nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length.

Large-scale synthesis and photoluminescence of single-crystalline β-Ga2O3 nanobelts

“…Therefore, it is important to form 1D nanostructure of gallium oxide. Several methods have been developed to prepare b-Ga 2 O 3 nanowires and nanorods [18][19][20][21][22]. In addition, Pan et al synthesized b-Ga 2 O 3 nanobelts at 1000 C [23].…”

Enhanced NO2 gas sensing properties of WO3 nanorods encapsulated with ZnO

“…On the other hand, it is important to improve their sensing performance, detection limit, and operation temperature. A range of techniques, including surface functionalization [13][14][15][16], doping [17,18], and heterostructure formation [7,[19][20][21], have been developed to enhance the sensing performance, detection limit, and operation temperature of 1D nanostructure sensors. Among these techniques, the heterostructure formation method was adopted to enhance the sensing properties of the WO 3 1D nanostructure-based sensors in this study.…”

Methane adsorption characteristics on β-Ga2O3 nanostructures: DFT investigation

“…However, enhancing the detection limit and response toward target gas is a challenging task. In addition to surface functionalization [19,20], doping [21][22][23] and fabrication of heterostructures [24][25][26] are the general techniques for improving the stability, sensitivity and response of metal oxide sensors. Among these techniques, doping of Pt and Pd in pristine Ga 2 O 3 is effective since, the sensor resistance varies exponentially when target gas is exposed to Ga 2 O 3 base material at an ambient temperature.…”