2015
DOI: 10.1016/j.apsusc.2015.03.069
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Methane adsorption characteristics on β-Ga2O3 nanostructures: DFT investigation

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Cited by 20 publications
(6 citation statements)
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“…Hitherto, quite few theoretical investigations have been devoted to understanding the interaction behaviors between gas molecules and Ga 2 O 3 in the field of gas sensors. DFT calculations [ 232 , 234 , 235 ] have been performed to study the adsorption, dissociation, and diffusion characteristics of gas molecules on the surface of Ga 2 O 3 . It is suggested that the calculated adsorption energy, electron structures of oxygen vacancy, and charge transfer are highly significant in defining the performance of a sensor.…”
Section: Discussionmentioning
confidence: 99%
“…Hitherto, quite few theoretical investigations have been devoted to understanding the interaction behaviors between gas molecules and Ga 2 O 3 in the field of gas sensors. DFT calculations [ 232 , 234 , 235 ] have been performed to study the adsorption, dissociation, and diffusion characteristics of gas molecules on the surface of Ga 2 O 3 . It is suggested that the calculated adsorption energy, electron structures of oxygen vacancy, and charge transfer are highly significant in defining the performance of a sensor.…”
Section: Discussionmentioning
confidence: 99%
“…14 Moreover, previous studies show that the bulk β-Ga 2 O 3 surface can interact with specific molecules, such as O 2 , H 2 O, CO, and methane. 15–18 This indicates that the surface plays an important role in the adsorption properties of β-Ga 2 O 3 . Certainly, devices based on such cleaved 2D or quasi-2D Ga 2 O 3 materials show excellent adsorption and electronic performance compared with the bulk counterpart.…”
Section: Introductionmentioning
confidence: 95%
“…The calculated quantum chemical parameters [52][53][54] such as frontier molecular orbitals (HOMO and LUMO), HOMO-LUMO energy gap, dipole moment (µ) [55] and the percentage of variation of HOMO-LUMO gap |ΔE g | [56,57] can be useful for rationalizing the electronic properties of both γ-CD and the formed inclusion complex BaP/γ-CD. The computed values for these quantities are listed in Table 2.…”
Section: Electronic and Sensing Properties Of γ-Cd Towards Bapmentioning
confidence: 99%