Zur quantitativen Durchführung der Raumladungs- und Randschichttheorie der Kristallgleichrichter

Schottky, W.; Spenke, Eberhard

doi:10.1007/978-3-642-99673-3_17

Cited by 55 publications

(12 citation statements)

References 3 publications

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“…Schottky barrier diodes have been under practical consideration since the early 1930s and the transport mechanisms that determine the J-V re lations have been the object of much theoretical research (Wagner, 1931;Schottky and Spenke, 1939;Sze, 1969), which has been reviewed by Rhoderick (1974) and Padovani (1971). The forward-bias transport mecha nisms (for n-type semiconductors, for example) include (a) thermionic emission of electrons from the semiconductor over the top of the barrier into the metal, (b) recombination in the depletion region, (c) quantum mechanical tunneling through the barrier, and (d) hole (minority carrier) injection and diffusion.…”

Section: Basic Schottky Barriersmentioning

confidence: 99%

Junctions

Fahrenbruch

Bube

1983

Fundamentals of Solar Cells

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Section: Basic Schottky Barriersmentioning

confidence: 99%

Junctions

Fahrenbruch

Bube

1983

Fundamentals of Solar Cells

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“…7, a t low current levels the experimental points deviate from the dependence predicted by the thermionic emission theory. An alternative description of I-U characteristics is the diffusion-limited approximation developed by Schottky and Spenke [18].…”

Section: Resultsmentioning

confidence: 99%

Current transport in AuCdTeAu structures

Bała

Łęgowski

Μęczyńska

1980

Phys. Stat. Sol. (a)

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The current‐voltage, capacitance‐voltage, and resistivity‐voltage characteristics of metal‐semiconductor‐metal structures are studied. Experimental AuCdTeAu structures are made from n‐type CdTe with carrier concentrations of 2.1 × 1020 m−3 and thicknesses of (12 ± 3) μm. A theoretical treatment is given of the current transport in the structures based upon the application of thermionic diffusion theory to double Schottky diodes. Good agreement is obtained between the experimental results and theoretical predictions.

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“…techniques. [14][15][16][17][18][24][25][26][27] However, the microscopic origins of this defect are not clear as yet. Annealing ZnO samples in different ambient increases the intensity of the DLTS peak for the E3 defect (Figure 3(a)), with the highest intensity being observed for the Ar þ O 2 annealed samples.…”

Section: Emission Properties Of E3mentioning

confidence: 99%

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

Mtangi

Schmidt

Auret

et al. 2013

Journal of Applied Physics

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We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 C and also in oxygen ambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27 meV was observed in the as-received samples by capacitance-temperature, CT scans. After annealing the samples, an increase in the shallow donor concentrations was observed. For the annealed samples, E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35 meV was detected. For samples annealed above 650 C, an increase in acceptor concentration was observed which affected the low temperature capacitance. Deep level transient spectroscopy revealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples. Annealing of the samples at 650 C removes the E4 and E5 deep level defects, while E2 also anneals-out at temperatures above 800 C. After annealing at 700 C, the T2 deep level defect was observed in all other ambient conditions except in Ar. The emission properties of the E3 deep level defect are observed to change with increase in annealing temperature beyond 800 C. For samples annealed beyond 800 C, a decrease in activation enthalpy with increase in annealing temperature has been observed which suggests an enhanced thermal ionization rate of E3 with annealing. V C 2013 American Institute of Physics. [http://dx

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Zur quantitativen Durchführung der Raumladungs- und Randschichttheorie der Kristallgleichrichter

Cited by 55 publications

References 3 publications

Junctions

Junctions

Current transport in AuCdTeAu structures

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

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