Current transport in AuCdTeAu structures

Abstract

The current‐voltage, capacitance‐voltage, and resistivity‐voltage characteristics of metal‐semiconductor‐metal structures are studied. Experimental AuCdTeAu structures are made from n‐type CdTe with carrier concentrations of 2.1 × 1020 m−3 and thicknesses of (12 ± 3) μm. A theoretical treatment is given of the current transport in the structures based upon the application of thermionic diffusion theory to double Schottky diodes. Good agreement is obtained between the experimental results and theoretical predictions.