Zur frage des dampfdrucks der verbindungen InAs, GaAs, InP und GaP

Folberth, O. G.

doi:10.1016/0022-3697(58)90280-4

Cited by 20 publications

(5 citation statements)

References 8 publications

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“…A few investigators have used a vapor density approach, ,− in which a sealed ampule containing a known initial mass of compound is equilibrated at a given temperature and quenched. The loss in mass of the sample (presumably caused by the formation of P 4 vapor), divided by the ampule volume, yields the equilibrium partial pressure.…”

Section: Gibbs Energiesmentioning

confidence: 99%

The Thermodynamic Properties of Phosphorus and Solid Binary Phosphides

Schlesinger

2002

Chem. Rev.

138

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Section: Gibbs Energiesmentioning

confidence: 99%

The Thermodynamic Properties of Phosphorus and Solid Binary Phosphides

Schlesinger

2002

Chem. Rev.

138

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“…Gallium phosphide (GAP) has been prepared in a number of laboratories from a stoichiometric or nearly stoichiometric melt (1,2). In this paper such an ingot was prepared using the horizontal zone melting apparatus sketched in Fig.…”

mentioning

confidence: 99%

Segregation of Silicon in Gallium Phosphide

Rubenstein

1965

J. Electrochem. Soc.

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Gallium phosphide was prepared using a horizontal refining technique. The liquid zone was maintained close to the stoichiometric composition. An ingot, doped with silicon, was zone refined. From electrical, optical transmission, and spectrochemical measurements, it is demonstrated that silicon (at concentrations in the range of 1018 at./cc) is a donor impurity with an activation energy of 0.06 ev, that silicon substitutes for gallium, and that the segregation coefficient for silicon in normalGaP is 0.6.

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“…In this operation, some part of the quartz envelope contains solid arsenic at about 610~ in equilibrium with arsenic vapor at 1 atm pressure. This is slightly greater than the arsenic decomposition pressure of 0.9 atm from gallium arsenide at the melting point (1237~ (1,2).…”

mentioning

confidence: 76%

“…As,(,) ~ 2As~(,) With an As~(,) pressure of 0.090 atm substituted in the expression for the equilibrium constant for reaction [2], the gallium activity in gallium arsenide at 1250~ is 0.56. The activity of gallium in gallium arsenide in equilibrium with 1 atm of arsenic vapor must also be known at lower temperatures for some of the calculations to be made later in this paper.…”

Section: Gallium Activity In Gallium Arsenidementioning

confidence: 99%

Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium Arsenide

Cochran

Foster

1962

J. Electrochem. Soc.

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The reaction of gallium with quartz to produce gallium suboxide, Ga2O , and silicon is shown by equilibrium calculations to be a mechanism by which gallium arsenide can become contaminated with silicon, and possibly oxygen, when synthesized in quartz systems. The contamination of gallium arsenide with silicon by this reaction is governed by the rate at which the gallium suboxide vapor is removed. The silicon content commonly observed in normalGaAs (up to a few ppm) can be accounted for by this mechanism. Suggestions for minimizing the attack are given. The apparent transport of normalGaAs in a system containing traces of water vapor can be explained by reaction of water with gallium in the hot zone to form Ga2O and hydrogen, which react with arsenic in the cold zone to produce normalGaAs and regenerate the water.

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Zur frage des dampfdrucks der verbindungen InAs, GaAs, InP und GaP

Cited by 20 publications

References 8 publications

The Thermodynamic Properties of Phosphorus and Solid Binary Phosphides

The Thermodynamic Properties of Phosphorus and Solid Binary Phosphides

Segregation of Silicon in Gallium Phosphide

Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium Arsenide

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