Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium Arsenide

Abstract

The reaction of gallium with quartz to produce gallium suboxide, Ga2O , and silicon is shown by equilibrium calculations to be a mechanism by which gallium arsenide can become contaminated with silicon, and possibly oxygen, when synthesized in quartz systems. The contamination of gallium arsenide with silicon by this reaction is governed by the rate at which the gallium suboxide vapor is removed. The silicon content commonly observed in normalGaAs (up to a few ppm) can be accounted for by this mechanism. Suggestions for minimizing the attack are given. The apparent transport of normalGaAs in a system containing traces of water vapor can be explained by reaction of water with gallium in the hot zone to form Ga2O and hydrogen, which react with arsenic in the cold zone to produce normalGaAs and regenerate the water.

The phase equilibria in the Au–In–Ga ternary system

“…The crucibles were transferred into quartz tubes and these were evacuated (~10 -5 mbar). The reason to keep the samples in alumina crucibles was to prevent the reaction of Ga with silica at high temperatures [9]. The samples were heated to 1100C, slightly higher than the melting point of Au, kept at that temperature for one night and subsequently annealed at 280C (except for samples 1-4 which were annealed at 300C) for one to three weeks (see table 1).…”

Optical and structural studies of GaN 3D structures selectively grown by MOCVD

“…The natural substrate surface oxides formed before the growth process should be taken into account for the 3D structure initial formation. Furthermore, Ga reactions with oxides have yet been observed [24]. During this reaction, SiO x is formed and, as a consequence, it could explain the electron beam transparency observed in the rod of balloons after annealing under NH 3 .…”

LPE technology for power GaAs diode structures

“…The coefficients 1 7 K K − are determined from the experimental results described, for example, in [ [8][9][10] ]. In accordance with these reactions and adding the vaporized oxygen into the gas environment, we increase the concentration of 2 Ga O and, consequently, the break of the very first initiative reaction will take place, which in turn decreases the concentration of 2 SiO in catalyzing silicon.…”