Optical and structural studies of GaN 3D structures selectively grown by MOCVD

Viste, Pierre; Colombier, Isabelle; Donatini, Fabrice; Vial, Jean-Claude; Baldeck, Patrice L.; Hérino, R.; Duc-Maugé, A.; Godfroyd, J.; Lacroute, Y.; Sacilotti, M.

doi:10.1016/j.jcrysgro.2004.09.002

Cited by 6 publications

(12 citation statements)

References 34 publications

(89 reference statements)

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“…We just used the conventional MOCVD facilities for the growth of semiconducting wire-like materials. The use of MO multiple sources can eventually be used for III-V bandgap engineering and selectively wiring circuit [11,16].…”

Section: Resultsmentioning

confidence: 99%

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Sacilotti

Décobert²,

Sik³

et al. 2004

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Sacilotti

Décobert²,

Sik³

et al. 2004

Journal of Crystal Growth

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“…[9][10][11]40 There is no relation of heteroepitaxy between the crystalline state of the substrate and the 3D scepter structure composed of a carbon cone shaped base and a metallic sphere on top: the 3D-S does not copy the underlying crystallographic states. 51 This is not always the case; it may happen that a metallic epitaxial growth reproduces the underlying structure of a crystalline substrate although separated from it by an amorphous and dielectric layer a few nanometer thick. 66 However, even in this case, the epitaxy takes place perpendicularly to the substrate.…”

Section: Mocvd Growth Of 3d-s Perpendicular To the Substratementioning

confidence: 99%

“…A cone shaped carbon base, or carbon column, has been evidenced for these 3D-Ss; the first 3D-S seed comes very likely from a surface interaction between a carbon radical and the substrate. 51 The TMGa molecule gives the carbon radical. The carbon base and sphere grow together.…”

Section: Mocvd Growth Of 3d-s Perpendicular To the Substratementioning

confidence: 99%

Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Cheyssac

Sacilotti

Patriarche

2006

Journal of Applied Physics

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International audienceThe growth mechanism model of a nanoscaled material is a critical step that has to be refined for a better understanding of a nanostructure's dot/wire fabrication. To do so, the growth mechanism will be discussed in this paper and the influence of the size of the metallic nanocluster starting point, referred to later as “size effect,” will be studied. Among many of the so-called size effects, a tremendous decrease of the melting point of the metallic nanocluster changes the physical properties as well as the physical/mechanical interactions inside the growing structure composed of a metallic dot on top of a column. The thermodynamic size effect is related to the bending or curvature of chains of atoms, giving rise to the weakening of bonds between them; this size or curvature effect is described and approached to crystal nanodot/wire growth. We will describe this effect as that of a “cooking machine” when the number of atoms decreases from 1023 at./cm3 for a bulk material to a few tens of them in a 1–2 nm diameter sphere. The decrease of the number of atoms in a metallic cluster from such an enormous quantity is accompanied by a lowering of the melting temperature that extends from 200 up to 1000 K, depending on the metallic material and its size under study. In this respect, the vapor-liquid-solid VLS model, which is the most utilized growth mechanism for quantum nanowires and nanodots, is critically exposed to size or curvature effects CEs. More precisely, interactions in the vicinity of the growth regions should be reexamined. Some results illustrating the growth of micrometer-/nanometer-sized materials are presented in order to corroborate the CE/VLS models utilized by many research groups in today's nanosciences world. Examples of metallic clusters and semiconducting wires will be presented. The results and comments presented in this paper can be seen as a challenge to be overcome. From them, we expect that in a near future an improved model can be exposed to the scientific communit

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“…The size effect is associated to the lowering of the melting point of a metallic cluster when its size decreases [11][12][13]. In the same sense and without explanation of the actual mechanism taking place, our group proposed a different way for building 3D-S micro/nanometer sized materials, based on interactions of organometallic precursors with many different substrates and structures deposited on them [14,15]. This paper presents the most important and recent results dealing with 3D-S growth by interaction of organometallic (OM) with substrates containing metal on its surfaces or metallic substrates.…”

Section: Introductionmentioning

confidence: 99%

Organometallic precursors as catalyst to grow three-dimensional micro/nanostructures: Spheres, clusters & wires

Sacilotti¹,

Cheyssac

Patriarche³

et al. 2007

Surface and Coatings Technology

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This paper presents the growth and characterization of three-dimensional structures using metal-organic (or organometallic) chemical precursors like M(CH 3) 3 , where M is a metal. Their morphology depends principally on growth temperature and conditions at the surface of the substrate. These 3D structures can be separated into two classes: i) one with (Ga, Al, In) metallic alloys shaped as sphere, sceptre or cylinder and a carbon membrane covering the alloy; ii) the other with semiconductor or oxide nanowires capped by a metallic sphere. The metal-organic precursors can be seen as catalysts molecules that grow semiconductors with micro and nanostructures similar to the role of gold particles used to grow nanowires in the VLS mechanism. We present the MOCVD growth of Ga 2 O 3 , CuGa x O y and (Ga,In)P nanowires using the metal-organic precursors on metallic or metal containing substrates.

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Optical and structural studies of GaN 3D structures selectively grown by MOCVD

Cited by 6 publications

References 34 publications

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Organometallic precursors as catalyst to grow three-dimensional micro/nanostructures: Spheres, clusters & wires

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