ZrN-Based Flexible Resistive Switching Memory

Kumar, Dayanand; Chand, Umesh; Lew, Wen Siang; Tseng, Tseung‐Yuen

doi:10.1109/led.2020.2981529

Cited by 30 publications

(25 citation statements)

References 21 publications

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“…In most of the reported studies, synaptic properties of the switching materials that have been employed toward the demonstration of flexible devices have not been studied. 7,8,[10][11][12][13][14]62 In some other published studies in which synaptic properties of the switching material have been studied, transferring of the active material or of the completed device is required, 9,63 the mechanical strain of devices is low, 65−68 while in others, the preparation of the active material is time-consuming. 61,69 These steps complicate device processing and could act as a bottleneck toward the scaling up of the process.…”

Section: Discussionmentioning

confidence: 99%

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Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Papakonstantinopoulos

Bousoulas

Tsigkourakos

et al. 2021

ACS Appl. Electron. Mater.

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The growth of flexible memory devices with intrinsic neuromorphic properties is attracting tremendous attention due to the wide spread of wearable electronics. The fabrication of robust artificial synaptic structures that will have the ability to remain operational after various strain loads and perform artificial synaptic weight modulation procedures is considered the cornerstone for the development of wearable neuromorphic computing systems. Along these lines, a low-temperature Ag/SiO 2 /TiN memristive device is demonstrated on a polyethylene naphthalate substrate decorated with Pt nanoparticles (NPs) with a 5 nm average diameter. The memory devices are completely forming-free, operate at a low voltage of 500 mV, and exhibit great stability after bending numerous times under a record high mechanical strain of 4.16% without any severe degradation of the pulse endurance and retention capabilities. Concrete pieces of evidence regarding the crack suppression effect induced by the layer of Pt NPs on the robust memory performance are also provided. Moreover, a thorough analysis of the neuromorphic properties of our prototypes is presented, including the implementation of short-term plasticity effects, such as paired-pulsed facilitation and paired-pulse depression, which are of great importance for the rehearsal procedures of neurons during the learning function as well as for the linear distribution of the conductance pattern during synaptic potentiation and depression tasks. Additionally, Hebbian spike-time-dependent-plasticity responses were also recorded.

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Section: Discussionmentioning

confidence: 99%

“…In the field of flexible resistive memories, many devices have been demonstrated on various flexible substrates. Most of them have been developed on polyimide (PI), − polyethylene terephthalate (PET), − and polyethylene naphthalate (PEN) …”

Section: Introductionmentioning

confidence: 99%

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Papakonstantinopoulos

Bousoulas

Tsigkourakos

et al. 2021

ACS Appl. Electron. Mater.

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“…Particularly, in the reported literature [11][12], ZrN films with high thermal conductivity (50W/mK) and a semiconductor phase was applied as an active layer of RRAM [13], which reported low voltage operation and the feasibility of stable RS characteristics. In addition, in our previous work [14], we reported that oxygen doping within the ZrN films could improve the reliability of the memory cell by lowing the operating current level especially for the reset current for filament erasure. Nevertheless, in order to realize the high-density crossbar array (CBA) configuration, the reading errors that are caused by the sneak current should be suppressed.…”

Section: Introductionmentioning

confidence: 97%

Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode

Jung

Lee²,

Kim

et al. 2021

IEEE Access

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In this study, we investigated the self-rectifying characteristics of p-Si/O-doped ZrN/TiN structures in order to overcome a disturbance between neighboring cells in array structures. The proposed device shows a nonlinear selection characteristic and a Schottky diode property in the positive bias region.We also observed the rectifying region within -2 V, which suppresses the interference with neighboring cells that occurs during a reading operation. Any RS phenomena is not observed especially for the reverse bias sweep to reset the proposed device, which indicated that the proposed device has an intrinsic rectifying property. The proposed device shows the highest current ratio of 6×10 2 at -4.5 V and a maximum current limiting capability in the bias region above -2 V. In addition, the O-doped ZrN memory device shows a stable retention up to 10 4 seconds at 125 °C as well as a high read margin of 380. Therefore, the proposed device suppresses interference in the read operation without additional selector elements, enabling stable memory operation.

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“…According to the reported literature [11], ZrN has attracted much attention as a resistance switching material due to its high thermal conductivity (50 W/mK) and semiconductor phase characteristics, which result in suppression of the random formation of the conductive filament (CF) and improvement of the current overshoot phenomenon of the RRAM. The Kumar Group recently reported an improvement of resistive switching (RS) characteristics, such as the reduced current variation, for ZrN-based RRAM results [12]. However, it is still necessary to lower the high driving current (more than~10 mA) and the high forming voltage of the ZrN-based RRAM device because it is the cause of the decrease in reliability.…”

Section: Introductionmentioning

confidence: 99%

Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method

et al. 2021

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In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/p-Si was used as BE, the foaming voltage slightly increased, but the operation current was reduced by about two orders. In particular, the average reset current of the O-doped ZrN memory cells was reduced to 50 µA, which can delay deterioration of the element, and reduces power consumption. Therefore, the use of PtSi as the BE of the O-doped ZrN films is considered highly effective in improving reliability through reduction of operating current of the memory cells.

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ZrN-Based Flexible Resistive Switching Memory

Cited by 30 publications

References 21 publications

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode

Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method

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ZrN-Based Flexible Resistive Switching Memory

Cited by 30 publications

References 21 publications

Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode

Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method

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Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique