Zr-based films for attenuated phase-shift mask

ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3–ZrO2–SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes

“…There have been many material 0040-6090/$ -see front matter D 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.tsf.2005.08.382 candidates, such as MoSiO [6], SiN x [7], CrAlO [8], ZrSiO [9], CrN/AlN [10] and Al 2 O 3 /Cr 2 O 3 [11] reported for AttPSM at a wavelength of 193 nm. These materials may also be used as HT-AttPSM blank materials.…”